Kajian struktur dan sifat elektronik material dua dimensi thallium phosphide (TlP) dengan kisi square density functional theory (DFT)
Muhammad Raihan Gibran, Prof. Sholihun, S.Si., M.Sc., Ph.D.Sc.
2026 | Skripsi | FISIKA
Penelitian ini dilakukan untuk mengkaji stabilitas
material dua dimensi (2D) thallium phosphide (TlP) dengan variasi
struktur kisi. Kajian ini penting karena konfigurasi geometris pada material
dua dimensi berpotensi menghasilkan sifat elektronik yang berbeda. Stabilitas
struktur dianalisis melalui pemodelan dan perhitungan energi total sistem menggunakan
pendekatan Density Functional Theory (DFT), di mana kondisi stabil
dicapai pada energi minimum. Optimasi struktur unit sel dilakukan melalui
kalkulasi self-consistent field (SCF) dan fitting persamaan keadaan Birch–Murnaghan
(BM-EOS) untuk memperoleh parameter kisi optimum serta energi kohesif. Sifat
elektronik dikaji melalui perhitungan band structure dan projected
density of states (PDOS), serta dianalisis pengaruh strain uniaxial
dan biaxial terhadap kestabilan dan sifat elektronik material. Hasil penelitian
menunjukkan bahwa struktur kisi square lebih stabil dibandingkan honeycomb,
dengan energi kohesif masing-masing sebesar ?6,96 eV dan ?6,87 eV. Struktur square
memiliki konstanta kisi 3,73 Å dan bersifat planar, sedangkan struktur honeycomb
memiliki konstanta kisi 4,38 Å dengan buckling sebesar 2,41 Å. Secara
elektronik, struktur square menunjukkan sifat metalik akibat kontribusi
orbital P-p di sekitar level Fermi. Pemberian compressive strain
memperkuat karakter metalik, sedangkan tensile strain melemahkannya dan
mengindikasikan kecenderungan transisi menuju semikonduktor. Batas kestabilan
mekanik struktur ditemukan berada di bawah strain +20%, di mana pada
kondisi tersebut struktur mengalami kerusakan signifikan.
This study
aims to investigate the stability of two-dimensional (2D) thallium phosphide
(TlP) with different lattice structures. This investigation is important
because geometric configurations in two-dimensional materials can lead to
distinct electronic properties. Structural stability was analyzed through total
energy calculations using the Density Functional Theory (DFT) approach, where
the stable condition corresponds to the minimum energy state. The unit cell
structure was optimized using self-consistent field (SCF) calculations and
fitted with the Birch–Murnaghan equation of state (BM-EOS) to obtain the
optimum lattice parameters and cohesive energy. The electronic properties were
examined through band structure and projected density of states (PDOS)
calculations. Furthermore, uniaxial and biaxial strain were applied to analyze
their effects on structural stability and electronic properties. The results
show that the square lattice structure is more stable than the honeycomb
structure, with cohesive energies of -6.96 eV and -6.87 eV, respectively. The
square structure has a lattice constant of 3.73 Å and is planar, whereas the
honeycomb structure has a lattice constant of 4.38 Å with a buckling of 2.41 Å.
Electronically, the square structure exhibits metallic behavior due to the
dominant contribution of P-p orbitals near the Fermi level. The application of
compressive strain enhances the metallic character, while tensile strain
weakens it and indicates a tendency toward a semiconductor transition. The
mechanical stability limit is found to be below +20% strain, beyond which
significant structural degradation occurs.
Kata Kunci : square, Sifat Elektronik, Thallium Phosphide (TlP), DFT