Efek Ketidakteraturan Terhadap Sifat Elektronik Dan Optik Material 2D Graphene: Kajian Numerik Metode Rambatan Waktu Trotter-Suzuki Orde 2
Emmistasega Subama, Prof. Drs. Pekik Nurwantoro,M.S.,Ph.D ; Dr. Iman Santoso, S.Si.,M.Sc
2025 | Disertasi | S3 Ilmu Fisika
Telah
dilakukan komputasi numerik penerapan metode rambatan waktu Trotter-Suzuki (TS)
orde kedua untuk menghitung struktur elektronik dan konduktivitas optik graphene
dalam pendekatan tight-binding (TB). Metode ini meningkatkan akurasi
dengan mengurangi suku koreksi hingga <!--[if gte msEquation 12]>
Metode
ini diterapkan pada graphene dengan ketidakteraturan berupa vakansi dan
impuritas hidrogen dengan konsentrasi hingga 50 ?lam distribusi acak maupun
terkontrol. Ketidakteraturan acak menghasilkan localized state di energi
Fermi dan menekan puncak singularitas van Hove (SvH) dalam DOS. Dibandingkan
dengan metode TS orde pertama, metode orde kedua meningkatkan akurasi sebesar
20 % untuk DOS dan 43 % untuk konduktivitas optik berdasarkan analisis full
width at half maximum (FWHM) dari puncak SvH. Tren serupa diamati dalam
ketidakteraturan terkontrol.
Selain itu, reflektivitas dihitung untuk ketidakteraturan acak menggunakan informasi DOS dan konduktivitas optik melalui persamaan Fresnel. Hasil menunjukkan adanya puncak pantulan pada energi 2 eV, yang mengalami penajaman sebesar 26%, berkaitan dengan serapan SvH pada DOS dan konduktivitas optik.
Numerical simulations employing the second-order Trotter-Suzuki (TS) method were conducted to investigate the electronic structure and optical conductivity of graphene nanomaterials within the tight-binding (TB) approximation. This approach enhances accuracy by incorporating correction terms up to ??² while improving computational efficiency through the commutative properties of the Hamiltonian. The density of states (DOS) was obtained via the Fourier transform of the correlation function derived from the Time-Dependent Schrödinger Equation (TDSE), whereas optical conductivity was computed using the Kubo formalism.
The
method was applied to graphene with structural disorder, including vacancies
and hydrogen impurities, with concentrations of up to 50% in both random and
controlled distributions. In randomly disordered systems, localized states
emerge at the Fermi energy, accompanied by a suppression of the van Hove
singularity (vHS) in the DOS. Compared to first-order TS calculations, the
second-order method improves accuracy by 20% for DOS and 43% for optical
conductivity, as indicated by full width at half maximum (FWHM) measurements of
the vHS peak. Similar trends were observed under controlled disorder
conditions.
Furthermore, reflectivity was analyzed under random disorder using Fresnel’s equations using DOS and optical conductivity information. The results reveal a reflection peak at 2 eV, exhibiting a 26% sharpening, which directly correlates with vHS absorption in both the DOS and optical conductivity.
Kata Kunci : Rapat Keadaan, Konduktivitas Optik, Reflektivitas, Graphene, Trotter-Suzuki, Disorder, Persamaan Schrödinger Gayut Waktu, fungsi korelasi.